| PART |
Description |
Maker |
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 150 ns, PQCC44
256K X 16 OTPROM, 200 ns, PDIP40
256K X 16 UVPROM, 150 ns, CDIP40
256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
| MX26C2000BQI-15 MX26C2000BTC-10 MX26C2000BTI-10 MX |
DIODE SCHOTTKY 15V 2X35A TO247AD
SWITCH PB SPST-NO .4VA SOLDERLUG
CONNECTOR ACCESSORY
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
IC HALF BRIDGE DRVR HS 2A 16-DIP 256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| GS880V37BGT-333I GS880V37BGT-360I GS880V37BT-360 G |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 1.8 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| CY62147EV30LL-45BVXA CY62147EV30LL-45BVXI CY62147E |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
|
| CY62146EV30LL-45BVXI CY62146EV30LL-45ZSXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| 29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
| T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog...
TMT[Taiwan Memory Technology]
TM Technology, Inc.
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
